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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION *With TO-126 package *Complement to type 2SC2911 *High breakdown voltage *Fast switching speed APPLICATIONS *High-voltage switching and AF 100W predriver applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2SA1209
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -180 -160 -5 -0.14 -0.20 1.0 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=-5mA VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-10mA ; VCE=-5V IC=-10mA ; VCE=-10V IE=0 ; VCB=-10V;f=1MHz 100 MIN
2SA1209
SYMBOL VCEsat ICBO IEBO hFE fT Cob
TYP.
MAX -0.4 -0.1 -0.1 400
UNIT V A A
150 4.0
MHz pF
Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=10mA IB1=-IB2=1mA 0.1 1.5 0.1 s s s
hFE Classifications R 100-200 S 140-280 T 200-400
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1209
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1209
4


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